MOSIS PARAMETRIC TEST RESULTS RUN: N85I VENDOR: HP-NID TECHNOLOGY: SCN035H FEATURE SIZE: 0.35 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: Hewlett Packard GMOS10QA. TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.60/0.4 Vth 0.63 -0.56 Volts SHORT 3.6/0.4 Idss 623 -325 uA/um Vth 0.55 -0.56 Volts Vpt 5.3 -7.0 Volts WIDE 10/0.4 -8.8 Volts Ids0 292.9 -2.8 pA/um LARGE 3.6/3.6 Vth 0.63 -0.65 Volts Vjbkd 9.5 -8.7 Volts Ijlk -4.5 -5.0 pA Gamma 0.65 0.58 V^0.5 Delta length 0.12 0.16 microns (L_eff = L_drawn-DL) Delta width 0.18 0.16 microns (W_eff = W_drawn-DW) K' (Uo*Cox/2) 83.7 -22.5 uA/V^2 COMMENTS: Delta L varies with design technology as a result of the different mask biases applied for each technology. Please adjust the delta L in this report to reflect the actual design technology of your submission. Design Technology Delta L ----------------- ------- SCN4M_SUBM (lambda=0.2), HP_CMOS10QA no adjustment SCN4M (lambda=0.25) subtract 0.1 um FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 Volts PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 UNITS Sheet Resistance 3.3 3.0 2.8 0.06 0.06 0.06 0.03 ohms/sq Width Variation -0.09 -0.04 0.00 0.03 -0.04 -0.09 0.17 microns (measured - drawn) Contact Resistance 3.1 2.9 2.5 0.91 0.83 1.11 ohms Gate Oxide Thickness 76 angstrom PROCESS PARAMETERS N\PLY N_WELL UNITS Sheet Resistance 1406 1365 ohms/sq Width Variation microns (measured - drawn) Contact Resistance ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 N_WELL UNITS Area (substrate) 902 850 90 29 13 7 5 86 aF/um^2 Area (N+active) 4564 43 18 13 10 aF/um^2 Area (P+active) 4546 aF/um^2 Area (poly) 62 17 10 7 aF/um^2 Area (metal1) 38 15 9 aF/um^2 Area (metal2) 41 15 aF/um^2 Area (metal3) 39 aF/um^2 Fringe (substrate) 197 181 42 19 18 26 aF/um Fringe (poly) 64 38 29 24 aF/um Fringe (metal1) 65 38 28 aF/um Fringe (metal2) 56 36 aF/um Fringe (metal3) 51 aF/um Overlap (N+active) 528 aF/um Overlap (P+active) 520 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.33 Volts Vinv 1.5 1.50 Volts Vol (100 uA) 2.0 0.21 Volts Voh (100 uA) 2.0 3.04 Volts Vinv 2.0 1.63 Volts Gain 2.0 -11.66 Ring Oscillator Freq. DIV4 (31-stage,3.3V) 311.35 MHz Ring Oscillator Power DIV4 (31-stage,3.3V) 3.60 uW/MHz/g COMMENTS: SUBMICRON SPICE LEVEL2/LEVEL3 parameters not available. N85I SPICE BSIM3 VERSION 3.1 (HSPICE Level 49) PARAMETERS * DATE: 98 Aug 26 * LOT: n85i WAF: 17 .MODEL CMOSN NMOS LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 7.6E-9 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.579412 +K1 = 0.6443761 K2 = 3.081977E-4 K3 = 12.4576649 +K3B = 9.2807835 W0 = 1.663064E-5 NLX = 2.715803E-7 +DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032 +DVT0 = 14.5206288 DVT1 = 0.6981272 DVT2 = -3.114278E-3 +U0 = 400.4844971 UA = 1.592734E-10 UB = 1.613884E-18 +UC = 4.411969E-11 VSAT = 1.652718E5 A0 = 1.0000129 +AGS = 0.2328181 B0 = 6.944434E-7 B1 = 5E-6 +KETA = 7.06235E-3 A1 = 0 A2 = 1 +RDSW = 644.5019706 PRWG = 0.0585705 PRWB = -1E-3 +WR = 1 WINT = 1.009819E-7 LINT = 5.443809E-8 +DWG = -6.733729E-9 DWB = 1.536201E-9 VOFF = -0.1435754 +NFACTOR = 1.4361748 CIT = 0 CDSC = 1.527511E-3 +CDSCD = 0 CDSCB = 0 ETA0 = 2.726626E-3 +ETAB = 0 DSUB = 0.0609376 PCLM = 0.6541683 +PDIBLC1 = 1 PDIBLC2 = 1.919617E-3 PDIBLCB = 0 +DROUT = 0.8522709 PSCBE1 = 1.290651E10 PSCBE2 = 2.513794E-9 +PVAG = 0.8006835 DELTA = 0.01 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 CGDO = 3.50E-10 +CGSO = 3.50E-10 CGBO = 0 CJ = 8.862345E-4 +PB = 0.99 MJ = 0.403991 CJSW = 1.738561E-10 +PBSW = 0.99 MJSW = 0.1391682 PVTH0 = 1.96708E-3 +PRDSW = -67.344869 PK2 = 7.030471E-3 WKETA = -9.09799E-3 +LKETA = 2.902271E-3 * * .MODEL CMOSP PMOS LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 7.6E-9 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.6070171 +K1 = 0.6230197 K2 = -2.394482E-3 K3 = 42.0931477 +K3B = 1.1229489 W0 = 1E-5 NLX = 2.987917E-8 +DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032 +DVT0 = 7.5936371 DVT1 = 0.7417594 DVT2 = -0.0742173 +U0 = 134.8771109 UA = 1.378318E-9 UB = 1.055918E-18 +UC = -6.2101E-11 VSAT = 1.479308E5 A0 = 0.995549 +AGS = 0.1430423 B0 = 8.720284E-7 B1 = 5E-6 +KETA = -1.238016E-3 A1 = 0 A2 = 1 +RDSW = 940.7985989 PRWG = -4.150758E-5 PRWB = -1E-3 +WR = 1 WINT = 9.970067E-8 LINT = 6.480067E-8 +DWG = -1.668501E-8 DWB = -8.182644E-9 VOFF = -0.1419218 +NFACTOR = 0.8711146 CIT = 0 CDSC = 1.413317E-4 +CDSCD = 0 CDSCB = 0 ETA0 = 0.1918579 +ETAB = -3.889763E-3 DSUB = 0.6366373 PCLM = 1.3017375 +PDIBLC1 = 2.560403E-3 PDIBLC2 = 7.0916E-4 PDIBLCB = 2.37525E-3 +DROUT = 0 PSCBE1 = 2E10 PSCBE2 = 8.798667E-9 +PVAG = 0.0335034 DELTA = 0.01 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 CGDO = 4.30E-10 +CGSO = 4.30E-10 CGBO = 0 CJ = 8.497619E-4 +PB = 0.99 MJ = 0.5616568 CJSW = 2.226252E-10 +PBSW = 0.99 MJSW = 0.3598727 PVTH0 = -7.912306E-4 +PRDSW = -85.6269675 PK2 = 5.601509E-3 WKETA = 2.674392E-3 +LKETA = -8.308404E-3 * * Download Text File